t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 1 of 9 2n6796, 2n6798, 2n6800, 2n6802 available on commercial versions n- channel mosfet qualified per mil - prf - 19500/ 557 qualified levels : jan, jantx , jantxv and jans* description this family of switching transistors is military qualified up to the jantx v level for high - reliability applications. the 2n6798 part number is also qualified to the jans level. these devices are also available in a low profile u - 18 lcc surface mount package. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to - 205af ( to - 39 ) package also available in : u- 18 lcc package (surface mount) 2n6796 u, 2n6798u , 2n6800u & 2n6802 u important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 6796, 2n6798, 2n6800 and 2n6802 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/557. *jans qualification is available on 2n6798 only. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applicat ions / benefits ? lightweight top - hat design with flexible terminals offers a variety of mounting flexibility. ? military and other high - reliability applications. maximum ratings @ t a = +25 oc unless otherwise stated parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 5.0 o c/w total power dissipation @ t a = +25 c @ t c = + 25 c (1) p t 0.8 25 w drain - source voltage, dc 2n6796 2n6798 2n6800 2n6 802 v ds 100 200 400 500 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) 2n6796 2n6798 2n6800 2n6802 i d1 8.0 5.5 3.0 2.5 a drain current, dc @ t c = +100 oc (2) 2n6796 2n6798 2n6800 2n6802 i d2 5.0 3.5 2.0 1.5 a off - state current (peak total value) (3) 2n6796 2n6798 2n6800 2n6802 i dm 32 22 14 11 a (pk) source current 2n6796 2n6798 2n6800 2n6802 i s 8.0 5.5 3.0 2.5 a see notes on next page. msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822 298 website: www.microsemi.com downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 2 of 9 2n6796, 2n6798, 2n6800, 2n6802 notes: 1. derate linearly 0.2 w/c for t c > +25 c . 2. the following formula derives the maximum theoretical i d lim it. i d is also limited by package and internal wires and may be limited due to pin diameter. 3 . i dm = 4 x i d1 as calculated in note 2. mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? term inals: tin/ l ead sold er dip nickel plate or rohs compliant pure tin plate (commercial grade only). ? marking: part number, d ate c ode, m anufacturers id. ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomencla ture jan 2n6796 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level (2n6798) blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 3 of 9 2n6796, 2n6798, 2n6800, 2n6802 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = 1 .0 ma 2n6796 2n6798 2n6800 2n6802 v (br)dss 100 200 400 500 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125c v ds v gs , i d = 0.25 ma, t j = - 55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125c i gss1 i gss2 100 200 na dra in current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 16 0 v v gs = 0 v, v ds = 320 v v gs = 0 v, v ds = 40 0 v 2n6796 2n6798 2n6800 2n6802 i dss1 25 a drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 16 0 v, t j = +125 c v gs = 0 v, v ds = 32 0 v, t j = +125 c v gs = 0 v, v ds = 40 0 v, t j = +125 c 2n6796 2n6798 2n6800 2n6802 i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 5.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed v gs = 10 v, i d = 2 .0 a pulsed v gs = 10 v, i d = 1.5 a pulsed 2n6796 2n6798 2n6800 2n6802 r ds(on)1 0.18 0.40 1.00 1.50 ? static drain - source on - state resistance v gs = 10 v, i d = 8.0 a pulsed v gs = 10 v, i d = 5.5 a pulsed v gs = 10 v, i d = 3 .0 a pulsed v gs = 10 v, i d = 2.5 a pulsed 2n6796 2n6798 2n6800 2n6802 r ds(on)2 0.195 0.420 1.100 1.600 ? static drain - source on - state resistance t j = +125c v gs = 10 v, i d = 5.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed v gs = 10 v, i d = 2 .0 a pulsed v gs = 10 v, i d = 1.5 a pulsed 2n6796 2n6798 2n6800 2n6802 r ds(on)3 0.35 0.75 2.40 3.50 ? diode forward voltage v gs = 0 v, i d = 8.0 a pulsed v gs = 0 v, i d = 5.5 a pulsed v gs = 0 v, i d = 3 .0 a pulsed v gs = 0 v, i d = 2.5 a pulsed 2n6796 2n6798 2n6800 2n6802 v sd 1.5 1.4 1.4 1.4 v downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 4 of 9 2n6796, 2n6798, 2n6800, 2n6802 elec trical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 8.0 a , v ds = 50 v v gs = 10 v, i d = 5.5 a , v ds = 50 v v gs = 10 v, i d = 3.0 a , v ds = 50 v v gs = 10 v, i d = 2.5 a , v ds = 50 v 2n6796 2n6798 2n6800 2n6802 q g(on) 28.51 42.07 34.75 33.00 nc gate to source charge v gs = 10 v, i d = 8.0 a , v ds = 50 v v gs = 10 v, i d = 5.5 a , v ds = 50 v v gs = 10 v, i d = 3.0 a , v ds = 50 v v gs = 10 v, i d = 2.5 a , v ds = 50 v 2n6796 2n6798 2n6800 2n6802 q gs 6.34 5.29 5.75 4.46 nc gate to drain charge v gs = 10 v, i d = 8.0 a , v ds = 50 v v gs = 10 v, i d = 5.5 a , v ds = 50 v v gs = 10 v, i d = 3.0 a , v ds = 50 v v gs = 10 v, i d = 2.5 a , v ds = 50 v 2n6796 2n6798 2n6800 2n6802 q gd 16.59 28.11 16.59 28.11 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 8.0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 30 v i d = 5.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 77 v i d = 3 .0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 176 v i d = 2.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 225 v 2n6796 2n6798 2n6800 2n6802 t d(on) 30 ns rinse time i d = 8.0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 30 v i d = 5.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 77 v i d = 3 .0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 176 v i d = 2.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 225 v 2n6796 2n6798 2n6800 2n6802 t r 75 50 35 30 ns turn - off delay time i d = 8.0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 30 v i d = 5.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 77 v i d = 3 .0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 176 v i d = 2.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 225 v 2n6796 2n6798 2n6800 2n6802 t d(off) 40 50 55 55 ns fall time i d = 8.0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 30 v i d = 5.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 77 v i d = 3 .0 a, v gs = + 10 v, r g = 7.5 ? , v dd = 176 v i d = 2.5 a, v gs = + 10 v, r g = 7.5 ? , v dd = 225 v 2n6796 2n6798 2n6800 2n6802 t f 45 40 35 30 ns diode reverse recovery time di/dt 100 a/s, v dd 50 v, i f = 8.0 a di/dt 100 a/s, v dd 50 v, i f = 5.5 a di/dt 100 a/s, v dd 50 v, i f = 3 .0 a di/dt 100 a/s, v dd 50 v, i f = 2.5 a 2n6796 2n6798 2n6800 2n6802 t rr 300 500 700 900 ns downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 5 of 9 2n6796, 2n6798, 2n6800, 2n6802 graphs t 1 , r ectangle p ulse d uration (seconds) figure 1 C normalized t ransient t hermal i mpedance t hermal r esponse (z ? jc ) downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 6 of 9 2n6796, 2n6798, 2n6800, 2n6802 graphs (continued) figure 2 C maximum d rain c urrent v ersus c ase t emperature g raphs t c , case temperature (c) t c , case temperature (c) for 2n6796 for 2n6798 t c , c ase temperature (c) t c , c ase temperature (c) 2n6800 2n6802 i d, drain current (a) i d, drain current (a) i d, drain current (a) i d, drain current (a) downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 7 of 9 2n6796, 2n6798, 2n6800, 2n6802 graphs (continued) figure 3 C maximum s afe o perating a rea v ds , drain - to - source voltage (volts) for 2n6796 v ds , drain - to - source voltage (volts) for 2n6798 i d, drain current (amperes) i d, drain current (amperes) downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 8 of 9 2n6796, 2n6798, 2n6800, 2n6802 graphs (continued) figure 3 C maximum s afe o perating a rea (continued) v ds , drain - to - source voltage (volts) for 2n6880 v ds , drain - to - source vol tage (volts) for 2n6802 i d, drain current (amperes) i d, drain - to - source - current (amperes) downloaded from: http:///
t4 - lds - 0047, rev . 3 (12 1483 ) ?201 2 microsemi corporation page 9 of 9 2n6796, 2n6798, 2n6800, 2n6802 package dimensions notes: 1. dimensions are in inches. millimeters are given for general information only. 2. beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is no t controlled. 5. dimension cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 +.001, - .000 (1.37 +0.03, - 0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. lu applies between l1 and l2. ld applies between l2 and l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. 11. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inch millimeters note min max min max cd 0.305 0.3 55 7.75 9.02 ch 0.16 0 .180 4.07 4.57 hd 0.335 0.370 8.51 9.39 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 12.70 19.05 7, 8 lu 0.016 0.019 0.41 0.48 7, 8 l1 0.050 1.27 7, 8 l2 0.250 6.35 7, 8 p .070 1.78 5 q 0.050 1.27 4 t l 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.7 2 0.86 2 th .009 .041 0.23 1.04 r 0.010 0.25 9 45 tp 45 tp 6 downloaded from: http:///
|
